Observation of Phonon Replica Emission in an In-Situ Fe/GaAs Spin LEDMANSELL, R; LALOË, J.-B; HOLMES, S. N et al.IEEE transactions on magnetics. 2008, Vol 44, Num 11, pp 2666-2669, issn 0018-9464, 4 p., 1Conference Paper

Electron heating effect on transport properties in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxyMATSUMURA, A; THORNTON, T. J; FERNANDEZ, J. M et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 373-377, issn 0022-0248Conference Paper

Quantum transport measurements of Si δ- and slab-doped In_0.53Ga_0.47As grown by molecular beam epitaxyMCELHINNEY, M; SKURAS, E; HOLMES, S. N et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 266-270, issn 0022-0248, 1Conference Paper

Suppression of spin-splitting in Al_0.33Ga_0.67As/Al_yGa_1-yas heterostructures with y varying from 0.10 to 0.15RUSSELL, V. H; HOLMES, S. N; ATKINSON, P et al.Semiconductor science and technology. 2007, Vol 22, Num 7, pp 722-727, issn 0268-1242, 6 p.Article

Spin-polarized electron transport in a NiFe/GaAs Schottky diodeHIROHATA, A; XU, Y. B; GUERTLER, C. M et al.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 914-916, issn 0304-8853, 1Conference Paper

Electrical and magneto-optical studies of MBE InAs on GaAsWANG, P. D; HOLMES, S. N; LE, T et al.Semiconductor science and technology. 1992, Vol 7, Num 6, pp 767-786, issn 0268-1242Article

Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBEPARKER, S. D; WILLIAMS, R. L; ZHANG, X et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 663-676, issn 0268-1242Article

Growth and magnetic properties of ultrathin single crystal Fe₃O₄ film on InAs(100)ZHAOCONG HUANG; YA ZHAI; YONGBING XU et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 10, pp 2377-2379, issn 1862-6300, 3 p.Article

Fermi surfaces and electronic structure of the Heusler alloy Co₂TiSnHICKEY, M. C; HUSMANN, A; HOLMES, S. N et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 10, pp 2897-2903, issn 0953-8984, 7 p.Article

Gating schemes for controlling the electron wavefunction between GaAs and In_0.05Ga_0.95As quasi-one-dimensional channelsGODFREY, M. D; HUSMANN, A; BEERE, H. E et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 8, issn 0953-8984, L123-L128Article

Domain-wall trapping in controlled mesoscopic ferromagnetic wire junctionsHIROHATA, A; XU, Y. B; YAO, C. C et al.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 1845-1847, issn 0304-8853, 2Conference Paper

Mobility (10⁶ cm² V^-1 s^-1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfacesBURKE, T. M; RITCHIE, D. A; LINFIELD, E. H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 202-206, issn 0921-5107Conference Paper

Hybrid Spintronic Structures With Magnetic Oxides and Heusler AlloysXU, Y. B; HASSAN, S. S. A; VAN DER LAAN, G et al.IEEE transactions on magnetics. 2008, Vol 44, Num 11, pp 2959-2965, issn 0018-9464, 7 p., 1Conference Paper

Electron spin filtering in ferromagnet/semiconductor heterostructures : Interface between photonics and magnetismBLAND, J. A. C; STEINMULLER, S. J; HIROHATA, A et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 18, pp 2204-2210, issn 0022-3727, 7 p.Article

Magnetic domain evolution in permalloy mesoscopic dotsHIROHATA, A; LEUNG, H. T; XU, Y. B et al.IEEE transactions on magnetics. 1999, Vol 35, Num 5, pp 3886-3888, issn 0018-9464, 2Conference Paper

Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxyMATSUMURA, A; FERNANDEZ, J. M; THORNTON, T. J et al.Semiconductor science and technology. 1995, Vol 10, Num 9, pp 1247-1252, issn 0268-1242Article

Fourier transform spectroscopy at diamond anvil cell pressuresHOLMES, S. N; LI, M; WEINSTEIN, B. A et al.Japanese journal of applied physics. 1992, Vol 32, pp 340-342, issn 0021-4922, SUP1Conference Paper

High-pressure far-infrared magneto-optical and luminescence studies of electronic states of impurity donors ― D(X) centres ― in high purity GaAsDMOCHOWSKI, J. E; STRADLING, R. A; WANG, P. D et al.Semiconductor science and technology. 1991, Vol 6, Num 6, pp 476-482, issn 0268-1242, 7 p.Article

Donor-related structure observed in the magnetoresistance of high-purity n-GaAs and InP observed under warm electron conditions and at low temperaturesHOLMES, S. N; WANG, P. D; COWAN, D. A et al.Semiconductor science and technology. 1990, Vol 5, Num 2, pp 150-158, issn 0268-1242, 9 p.Article

First observation of a two-dimensional electron gas at the interface of α-Sn/InSb (100) grown by molecular beam epitaxyYUEN, W. T; LIU, W. K; HOLMES, S. N et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 819-823, issn 0268-1242Article